Image sensor having self-aligned and overlapped photodiode and method of making same

ABSTRACT

An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such that a portion of the transfer gate protrudes laterally from under the masking layer. A photodiode is formed in the substrate to be self-aligned with the masking layer and to extending laterally under the transfer gate, that is, to overlap the transfer gate. Because of the overlap of the photodiode with the transfer gate, offset between the photodiode and the transfer gate is eliminated, such that an image lag phenomenon is eliminated.

RELATED APPLICATION

This application relies for priority on Korean Patent Application number2004-52694, filed in the Korean Intellectual Property Office on Jul. 7,2004, the contents of which are incorporated herein in their entirety byreference.

FIELD OF THE INVENTION

The invention is related to image sensors.

BACKGROUND OF THE INVENTION

Image sensors are devices which receive an optical signal from an objectand convert the optical signal to an electrical signal. The electricalsignal can then be transmitted for further processing, such asdigitization and then storage in a storage device such as a memory oroptical or magnetic disk, or for presentation on a display, printing,etc. Image sensors are typically used in devices such as digitalcameras, camcorders, printers, facsimile machines, etc.

Image sensors are typically of two types, namely, charge coupled device(CCD) sensors and CMOS image sensors (CIS). CCD sensors typically haveadvantages including low noise operation and device uniformity. CISdevices are typically characterized by low power consumption and can beoperated at high speed due to a high frame rate capability.

FIG. 1 is a schematic cross-sectional diagram of a conventional imagesensor. Referring to FIG. 1, the image sensor includes a substrate 1. Anisolation layer 3 is formed in the substrate 1. An n-type photodiode 5is formed in the substratel by an n-type high-energy ion implantationusing photoresist as a mask. A transfer gate structure 10, whichincludes a gate dielectric 7 and a gate electrode 9 made of, forexample, polysilicon, is formed over the substrate 1. An n-type floatingdiffusion region 13 is formed in the substrate 1 by n-typehigh-concentration ion implantation using the transfer gate structure 10as an implantation mask. A p-type hole accumulated device (HAD) region15 is formed by p-type high-concentration ion implantation using thetransfer gate structure 10 as an implantation mask. A channel region 17is formed between the floating diffusion region 13 and the HAD region15.

As illustrated in FIG. 1, the n-type floating diffusion region 13 andthe p-type HAD region 15 are formed to be self-aligned with the transfergate structure 10. However, because of possible misalignment, the n-typephotodiode 5 may not extend laterally to the edge of the transfer gatestructure 10. This results in formation of an offset region 19 betweenthe edge of the photodiode 5 and the edge of the transfer gate structure10. This offset region results in an undesirable “image lag” phenomenonin the sensor device.

FIG. 2 is an energy band diagram corresponding to the image sensordevice of FIG. 1. Referring to FIG. 2, the diagram shows the energybands for the photodiode region 5, the floating diffusion region 13, thechannel region 17 and the offset region 19 of the device. FIG. 2illustrates potential level of a corresponding conduction band E_(C) inthe photodiode 5, offset 19, channel 17 and floating diffusion 13regions.

As illustrated in FIG. 2, some amount of electron charges E1 and E2 aregenerated in the photodiode region 5 in response to incident light. Theamount of charge is dependent upon the intensity of the incident light.When the transfer gate electrode 9 has a high pulse applied, thepotential level indicated in FIG. 2 is lower, i.e., more positive. Thatis, E_(CH)′>E_(CH)″. The E1 group of electron charges will betransferred to the floating diffusion region 13. However, the E2 groupof charges will remain in the photodiode region. These remaining E2charges are trapped by the high potential barrier H_(B) caused by theoffset region 19. The E2 group of charges remaining in the photodioderegion result in the image lag phenomenon.

SUMMARY OF THE INVENTION

A feature of the invention is to provide an image sensor device and amethod for manufacturing an image sensor device in which the offsetregion in the prior art, and, therefore, the resulting image lag, areeliminated.

In accordance with a first aspect, the invention is directed to a devicewhich includes a gate dielectric layer formed on a substrate. A transfergate is formed on the gate dielectric layer. A masking layer is formedon the transfer gate, the masking layer having a width smaller than awidth of the transfer gate, such that a portion of the transfer gateprotrudes laterally from under the masking layer. A photodiode is formedin the substrate to be self-aligned with the masking layer and extendinglaterally under the transfer gate.

The device can further include a hole accumulated device (HAD) regionformed in the substrate to be aligned with an edge of the transfer gate.

In one embodiment, the photodiode is an n-type photodiode.

The device can further include a floating diffusion region, a resettransistor, a

In one embodiment, the device further includes a second transfer gateformed on the gate dielectric layer; a second masking layer formed onthe transfer gate, the second masking layer having a width smaller thana width of the second transfer gate, such that a portion of the secondtransfer gate protrudes laterally from under the second masking layer;and a second photodiode formed in the substrate to be self-aligned withthe second masking layer and extending laterally under the secondtransfer gate. In one embodiment, the second photodiode is an n-typephotodiode. The device can further include a floating diffusion regionshared by the first and second photodiodes. The device can also furtherinclude a reset transistor, a driver transistor and/or a selecttransistor.

In one embodiment, the masking layer comprises silicon oxynitride. Inanother embodiment, the masking layer comprises silicon nitride. In oneembodiment, the transfer gate comprises polysilicon.

In accordance with another aspect, the present invention is directed toa method of forming an image sensor. In accordance with the method, agate dielectric layer is formed on a substrate, and a transfer gate isformed on the gate dielectric layer. A masking layer is formed on thetransfer gate, the masking layer having a width smaller than a width ofthe transfer gate, such that a portion of the transfer gate protrudeslaterally from under the masking layer. A photodiode is formed in thesubstrate to be self-aligned with the masking layer and extendinglaterally under the transfer gate.

In one embodiment, forming the transfer gate comprises etching atransfer gate layer. The transfer gate can be anisotropically etched. Inone embodiment, forming the masking layer comprises etching the maskinglayer. The masking layer can be anisotropically etched. In oneembodiment, the masking layer and the transfer gate are etchedsequentially. In one embodiment, both the masking layer and the transfergate are anisotropically etched. In one embodiment, forming the maskinglayer comprises isotropically etching the masking layer.

In one embodiment, forming the masking layer comprises performing afirst etching step and a second etching step. The first etching stepand/or the second etching step can be an anisotropic etching step. Thesecond etching step can include wet etching. The etchant used in thesecond etching step can include NH₄OH. The etchant used on the secondetching step can include H₂O₂. The etchant used in the second etchingstep can include HF.

In one embodiment, the method further comprises forming a holeaccumulated device (HAD) region in the substrate to be aligned with anedge of the transfer gate. The method can include forming a floatingdiffusion region, a reset transistor, a driver transistor and/or aselect transistor.

In one embodiment, the photodiode is an n-type photodiode.

In one embodiment, the method further comprises: forming a secondtransfer gate on the gate dielectric layer; forming a second maskinglayer on the transfer gate, the second masking layer having a widthsmaller than a width of the second transfer gate, such that a portion ofthe second transfer gate protrudes laterally from under the secondmasking layer; and forming a second photodiode in the substrate to beself-aligned with the second masking layer and extending laterally underthe second transfer gate.

In one embodiment, the second photodiode is an n-type photodiode.

In one embodiment, the method further comprises forming a floatingdiffusion region shared by the first and second photodiodes. The methodcan also include forming a reset transistor, a driver transistor and/ora select transistor.

In one embodiment, the masking layer comprises silicon oxynitride. Inone embodiment, the masking layer comprises silicon nitride. In oneembodiment, the transfer gate comprises polysilicon.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the invention will beapparent from the more particular description of an embodiment of theinvention, as illustrated in the accompanying drawing. The drawings arenot necessarily to scale, emphasis instead being placed uponillustrating the principles of the invention. Like reference charactersrefer to like elements throughout the drawings.

FIG. 1 is a schematic cross-sectional diagram of a conventional imagesensor.

FIG. 2 is an energy band diagram corresponding to the image sensordevice of FIG. 1.

FIG. 3 is a schematic diagram of a pixel portion of a four-tiered typeCMOS image sensor (CIS) which is applicable to the present invention.

FIG. 4 is a schematic diagram of a pixel portion of a five-tiered typeCMOS image sensor (CIS) which is applicable to the present invention.

FIG. 5 is a schematic top layout view of the circuit of FIG. 4.

FIGS. 6 through 11 are schematic cross-sectional views taken along lineI-I′ of FIG. 5 illustrating a process of forming the image sensor deviceof FIG. 5 in accordance with the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

FIG. 3 is a schematic diagram of a pixel portion of a four-tiered typeCMOS image sensor (CIS) which is applicable to the present invention.Referring to FIG. 3, the active pixel PX1 of the CMOS image sensorincludes a photodiode PD that captures incident light and converts thelight to an electric charge. A transfer transistor TX passes the chargegenerated by the photodiode PD from the photodiode PD to a floatingdiffusion region N1 in response to a control signal on a transferactivation line TL. A reset transistor RX resets the charge accumulatedin the floating diffusion region N1 to a reference level in response toa control signal of a reset line RL. A driver transistor DX, which isused in a source follower (amplifier) configuration, buffers the voltageat N1 to the output V_(OUT). A select transistor SX is used to selectthe active pixel in response to a control signal on line WL.

FIG. 4 is a schematic diagram of a pixel portion of a five-tiered typeCMOS image sensor (CIS) which is applicable to the present invention. Inthe five-tiered CIS, two active pixels PX2 are formed using twophotodiodes PD1 and PD2. As shown in FIG. 4, the two photodiodes PD1 andPD2 share the floating diffusion region N1. This shared floatingdiffusion region N1 results in a more efficient image device.

Referring to FIG. 4, the CIS device includes the two photodiodes PD1 andPD2. Two corresponding transfer transistors TX′ and TX″ pass electriccharge from the photodiodes PD1 and PD2, respectively, to the sharedfloating diffusion region N1 in response to control signals on transfercontrol lines TL1 and TL2, respectively. If the control signal on lineTL1 is at a high level and the control signal on line TL2 is low,transfer transistor TX′ is on to transfer charge from photodiode PD1 tothe shared floating diffusion region N1 and transfer transistor TX″ isoff. If the control signal on line TL1 is at a low level and the controlsignal on line TL2 is high, transfer transistor TX″ is on to transfercharge from photodiode PD2 to the shared floating diffusion region N1,and transfer transistor TX′ is off. The reset transistor RX resets thecharge accumulated in the shared floating diffusion region N1 to areference level in response to a control signal on reset line RL. Adriver transistor DX, which is used in a source follower (amplifier)configuration, buffers the voltage at N1 to the output V_(OUT). A selecttransistor SX is used to select the active pixels PX2 in response to acontrol signal on line WL.

FIG. 5 is a schematic top layout view of the circuit of FIG. 4.Referring to FIG. 5, the circuit includes the two photodiodes 68 a and68 b, as well as a first photodiode active region 53 a′, a secondphotodiode active region 53 a″, and a transistor active region 53 b. Thecircuit also includes a first transfer gate (TG1) 59 a for activating afirst transfer transistor to transfer charge from the first photodiode68 a and a second transfer gate (TG2) 59 b for activating a secondtransfer transistor to transfer charge from the second photodiode 68 b.The circuit also includes a reset gate RG for activating a resettransistor, a drive gate DG for activating a driver transistor, a selectgate SG for activating a select transistor, a contact 77 h and aninterconnection 79. The circuit also includes a floating diffusion (FD)region 75.

FIGS. 6 through 11 are schematic cross-sectional views taken along lineI-I′ of FIG. 5 illustrating a process of forming the image sensor deviceof FIG. 5 in accordance with the invention.

Referring to FIG. 6, a p-type substrate 51 is prepared. An isolationlayer 53 is formed by a process such as local oxidation of silicon(LOCOS) or shallow trench isolation (STI). The first photodiode activeregion 53 a′, the second photodiode active region 53 a″ and thetransistor active region 53 b are defined on the substrate 51. A gatedielectric layer 57 is formed on the substrate 51. A gate electrodelayer made of polysilicon or tungsten silicide is formed on the gatedielectric layer 57, and a masking layer made of silicon oxynitride(SiON) or silicon nitride (SiN) is formed on the gate electrode layer.The SiON or SiN masking layer may serve as an anti-reflective layerduring photolithography used to pattern the gate structure. The gateelectrode layer and masking layer are etched to pattern the layers toform transfer gate structures 62 a and 62 b. The transfer gate structure62 a includes the first transfer gate (TG1) 59 a and a first initialmasking layer pattern 61 a stacked on the gate dielectric layer 57. Thetransfer gate structure 62 b includes the second transfer gate (TG2) 59b and a second initial masking layer pattern 61 b stacked on the gatedielectric layer 57. The etching step can be carried out by using ananisotropic dry etching down to the gate dielectric layer 57. The reset,drive, select and other gates may also be patterned during this step.

Referring to FIG. 7, the first initial masking layer patterns 61 a and61 b (shown in dashed lines) are isotropically etched, such as by wetetching. The etching solution can include NH₄OH, HF, H₂O₂ or deionizedwater, or a combination thereof. The ratios and concentrations f theetchant constituents is determined by considering the desired etchingrate of the masking layer patterns, which is based on whether themasking layer patterns are formed of SION or SiN. As a result of the wetetching of the first and second initial masking layer patterns 61 a and61 b, the first final masking layer pattern 61 a′ and 61 b′,respectively, are formed.

As noted from FIG. 7, the widths of the first and second final maskinglayer patterns 61 a′ and 61 b′ are less than the widths of thecorresponding first transfer gate (TG1) 59 a and second transfer gate(TG2) 59 b, respectively. That is, both of the transfer gates 59 a and59 b include exposed protruding portions 59 e′ and 59 e″.

Referring to FIG. 8, a photoresist pattern 63 is formed on the structureand patterned. The resulting photoresist pattern is formed on portionsof the first and second final masking layer patterns 61 a′ and 61 b′ andon the portion of the gate dielectric layer 57 between the two transfergate structures as shown. The photoresist pattern 63 is formed to leaveend portions 59 e′ of the transfer gates 59 a and 59 b exposed.

Referring to FIG. 9, a high-energy ion implantation is used to form twon-type photodiodes 65 a and 65 b. The high-energy ion implantationpenetrates the transfer gates 59 a and 59 b such that the photodiodes 65a and 65 b are self-aligned with the final masking layer patterns 61 a′and 61 b′ and overlaps with the transfer gates 59 a and 59 b. Becausethe high-energy ion implantation penetrates the transfer gates 59 a and59 b, the photodiodes 65 a and 65 b can be formed to extend under theedges of the transfer gates 59 a and 59 b, i.e., to overlap the transfergates 59 a and 59 b, without the need for a tilted ion implantation,i.e., a zero-degree ion implantation is used.

A high-concentration ion implantation is performed to form HAD regions67 a and 67 b. The high-concentration ion implantation does notpenetrate the transfer gates 59 a and 59 b such that the HAD regions 67a and 67 b are self-aligned with the transfer gates 59 a and 59 b. As aresult, the HAD regions 67 a and 67 b are surrounded by the photodiodes65 a and 65 b, respectively.

Referring to FIG. 10, the photoresist pattern 63 and the final maskinglayer patterns 61 a′ and 61 b′ are removed. Next, an n-typelightly-diffused drain (LDD) region 69 can optionally be formed bylow-concentration ion implantation. Gate spacers 71 are formed on thesides of the transfer gates 59 a and 59 b by an etch-back process. Aphotoresist pattern 73 is formed and patterned over the structure asshown. An n-type floating diffusion region (FD) 75, which is shared bythe two transfer gates 59 a and 59 b, is formed by an n-typehigh-concentration ion implantation using the photoresist pattern 73,the transfer gates 59 a and 59 b and gate spacers 71 as ion implantationmasks.

Referring to FIG. 11, an interlayer dielectric film 77 is deposited onthe structure. A contact hole 77 h is formed in the interlayerdielectric film 77 down to the top surface of the floating diffusionregion 75 and the LDD region 69 (if present). An interconnection 79 isthen formed in the contact hole 77 h.

In accordance with the invention, the photodiodes 65 a and 65 b areformed to overlap the transfer gates 59 a and 59 b, that is, to overlapwith the transfer gates 59 a and 59 b. Because of the isotropic etchingof the initial masking layer patterns 61 a and 61 b to form the finalmasking layer patterns 61 a′ and 61 b′, more accurate alignment of thephotodiodes than would be achieved using conventional photolithographytechniques is realized. As a result, the photodiodes 65 a and 65 b aresymmetric. The offset 19 (see FIG. 1) in conventional image sensingdevices is eliminated. This eliminates the image lag phenomenon found inconventional image sensing devices.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. A device, comprising: a gate dielectric layer formed on a substrate;a transfer gate formed on the gate dielectric layer; a masking layerformed on the transfer gate, the masking layer having a width smallerthan a width of the transfer gate, such that a portion of the transfergate protrudes laterally from under the masking layer; and a photodiodeformed in the substrate to be self-aligned with the masking layer andextending laterally under the transfer gate.
 2. The device of claim 1,further comprising a hole accumulated device (HAD) region formed in thesubstrate to be aligned with an edge of the transfer gate.
 3. The deviceof claim 1, wherein the photodiode is an n-type photodiode.
 4. Thedevice of claim 1, further comprising a floating diffusion region. 5.The device of claim 1, further comprising a reset transistor.
 6. Thedevice of claim 1, further comprising a driver transistor.
 7. The deviceof claim 1, further comprising a select transistor.
 8. The device ofclaim 1, further comprising: a second transfer gate formed on the gatedielectric layer; a second masking layer formed on the transfer gate,the second masking layer having a width smaller than a width of thesecond transfer gate, such that a portion of the second transfer gateprotrudes laterally from under the second masking layer; and a secondphotodiode formed in the substrate to be self-aligned with the secondmasking layer and extending laterally under the second transfer gate. 9.The device of claim 8, wherein the second photodiode is an n-typephotodiode.
 10. The device of claim 8, further comprising a floatingdiffusion region shared by the first and second photodiodes.
 11. Thedevice of claim 8, further comprising a reset transistor.
 12. The deviceof claim 8, further comprising a driver transistor.
 13. The device ofclaim 8, further comprising a select transistor.
 14. The device of claim1, wherein the masking layer comprises silicon oxynitride.
 15. Thedevice of claim 1, wherein the masking layer comprises silicon nitride.16. The device of claim 1, wherein the transfer gate comprisespolysilicon.
 17. A method of forming an image sensor, comprising:forming a gate dielectric layer on a substrate; forming a transfer gateon the gate dielectric layer; forming a masking layer on the transfergate, the masking layer having a width smaller than a width of thetransfer gate, such that a portion of the transfer gate protrudeslaterally from under the masking layer; and forming a photodiode in thesubstrate to be self-aligned with the masking layer and extendinglaterally under the transfer gate.
 18. The method of claim 17, whereinforming the transfer gate comprises etching a transfer gate layer. 19.The method of claim 18, wherein the transfer gate is anisotropicallyetched.
 20. The method of claim 17, wherein forming the masking layercomprises etching the masking layer.
 21. The method of claim 20, whereinthe masking layer is anisotropically etched.
 22. The method of claim 17,wherein the masking layer and the transfer gate are etched sequentially.23. The method of claim 17, wherein the masking layer and the transfergate are anisotropically etched.
 24. The method of claim 17, whereinforming the masking layer comprises isotropically etching the maskinglayer.
 25. The method of claim 17, wherein forming the masking layercomprises performing a first etching step and a second etching step. 26.The method of claim 25, wherein the first etching step is an anisotropicetching step.
 27. The method of claim 25, wherein the second etchingstep is an isotropic etching step.
 28. The method of claim 25, whereinthe second etching step comprises wet etching.
 29. The method of claim28, wherein an etchant used in the second etching step comprises NH₄OH.30. The method of claim 28, wherein an etchant used in the secondetching step comprises H₂O₂.
 31. The method of claim 28, wherein anetchant used in the second etching step comprises HF.
 32. The method ofclaim 17, further comprising forming a hole accumulated device (HAD)region in the substrate to be aligned with an edge of the transfer gate.33. The method of claim 17, further comprising forming a floatingdiffusion region.
 34. The method of claim 17, further comprising forminga reset transistor.
 35. The method of claim 17, further comprisingforming a driver transistor.
 36. The method of claim 17, furthercomprising forming a select transistor.
 37. The method of claim 17,wherein the photodiode is an n-type photodiode.
 38. The method of claim17, further comprising: forming a second transfer gate on the gatedielectric layer; forming a second masking layer on the transfer gate,the second masking layer having a width smaller than a width of thesecond transfer gate, such that a portion of the second transfer gateprotrudes laterally from under the second masking layer; and forming asecond photodiode in the substrate to be self-aligned with the secondmasking layer and extending laterally under the second transfer gate.39. The method of claim 38, wherein the second photodiode is an n-typephotodiode.
 40. The method of claim 38, further comprising forming afloating diffusion region shared by the first and second photodiodes.41. The method of claim 38, further comprising forming a resettransistor.
 42. The method of claim 38, further comprising forming adriver transistor.
 43. The method of claim 38, further comprisingforming a select transistor.
 44. The method of claim 17, wherein themasking layer comprises silicon oxynitride.
 45. The method of claim 17,wherein the masking layer comprises silicon nitride.
 46. The method ofclaim 17, wherein the transfer gate comprises polysilicon.